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| STC5NF20V N-channel 20V - 0.030 - 5A - TSSOP8 2.7V-drive STripFETTM II Power MOSFET Features Type STC5NF20V VDSS 20V RDS(on) < 0.040 (@ 4.5 V) < 0.045 (@ 2.7 V) ID 5A Ultra low threshold gate drive (2.7V) Standard outline for easy automated surface mount assembly TSSOP8 Application Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Marking 5N20V Package TSSOP8 Packaging Tape & reel Order code STC5NF20V October 2007 Rev 6 1/12 www.st.com 12 Contents STC5NF20V Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STC5NF20V Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Storage temperature Max. Operating junction temperature Value 20 20 12 5 3 20 1.5 -55 to 150 -55 to 150 Unit V V V A A A W C C PTOT Tstg TJ 1. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter Value 100 (1) 83.5 (2) Unit C/W C/W RthJ-PBC Thermal resistance junction-PBC Max RthJ-PBC Thermal resistance junction-PBC Max 2. When Mounted on minimum recommended footprint 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t = 10 sec. 3/12 Electrical characteristics STC5NF20V 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 12V VDS= VGS, ID = 250A VGS= 4.5V, ID= 2.5A VGS =2.7V, ID = 2.5A 0.6 0.030 0.037 0.040 0.045 Min. 20 1 10 100 Typ. Max. Unit V A A nA V Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 2.5A VDS =15V, f = 1 MHz, VGS = 0 Min. Typ. 9.5 460 200 50 8.5 1.8 2.4 11.5 Max. Unit S pF pF pF nC nC nC VDD =10V, ID = 4.5A VGS =4.5V 1. Pulsed: pulse duration=300s, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf td(off) tf tc Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD= 10V, ID= 2.5A, RG=4.7, VGS=4.5V Figure 14 on page 8 Vclamp =16V, ID = 5A RG = 4.7, VGS = 4.5V Figure 16 on page 8 Min. Typ. 7 33 27 10 26 11 21 Max. Unit ns ns ns ns ns ns ns 4/12 STC5NF20V Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5A, VGS = 0 ISD = 5A, di/dt = 100A/s, VDD = 10V, TJ = 150C Figure 16 on page 8 26 13 1 Test conditions Min. Typ. Max 5 20 1.2 Unit A A V ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/12 Electrical characteristics STC5NF20V 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 STC5NF20V Figure 8. Gate charge vs. gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics Figure 13. Thermal resistance and max power 7/12 Test circuit STC5NF20V 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 STC5NF20V Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STC5NF20V 10/12 STC5NF20V Revision history 5 Revision history Table 8. Date 09-Sep-2004 03-Aug-2006 01-Feb-2007 25-Oct-2007 Document revision history Revision 3 4 5 6 Initial electronic version The document has been reformatted, SOA updated Typo mistake on Table 2. Update marking on Table 1 Changes 11/12 STC5NF20V Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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